Enhanced Performance of CuIn1-xGxSe2 Solar Cell Through Optimization of Absorber and Buffer Layer Properties Using SCAPS-1D

IF 2.8 4区 生物学 3 Biotech Pub Date : 2022-09-02 DOI:10.26565/2312-4334-2022-3-09
G. Ibeh, C. Lawani, J. Emmanuel, P. Oyedare, E. Danladi, O. Ige
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引用次数: 1

Abstract

This study is a follow up to our previously published article on “Numerical Simulation of Copper Indium Gallium Diselenide Solar Cells Using One Dimensional SCAPS Software”. Five more parameters were optimized which are: absorber band gap, absorber electron affinity, buffer layer band gap, buffer layer electron affinity and working temperature using the same simulation tool initially used. When the absorber bandgap was varied between 0.8 eV and 1.6 eV, the efficiency of the solar cell increases until it reached its peak at 27.81%. This occurred at absorber bandgap of 1.4 eV. Other photovoltaic parameters at this optimum value are: Voc of 1.00 V, Jsc of 31.99 mA/cm2 and FF of 87.47 %. On varying the absorber electron affinity from 4.20 eV through 4.55 eV, we obtained an optimum value of 4.45 eV at Voc of 0.82 V, Jsc of 37.96 mA/cm2, FF of 84.99 % and an efficiency of 26.36%. The optimization of buffer bandgap resulted in an optimal value of 3.0 eV, when the buffer bandgap was varied between 1.6 eV and 3.2 eV. The photovoltaic parameters at this optimal value are: Voc of 0.80 V, Jsc of 37.96 mA/cm2, FF of 85.22 % and an efficiency of 25.86%. The effect of buffer electron affinity was studied by varying its value between 4.00 eV and 4.40 eV and its best value was found to be 4.05 eV at photovoltaic parameters with a Voc of 0.82 V, Jsc of 37.96 mA/cm2, FF of 84.98 % and an efficiency of 26.36 %. These optimized values in all parameters were used to simulate a solar cell which resulted to device with performances: Voc of 1.11 V, Jsc of 31.50 mA/cm2, FF of 88.91 % and an efficiency of 31.11 %. On varying the working temperature on the optimized solar cell, the optimized device with its best performance at 270 K with Photovoltaic (PV) values of Voc of 1.15 V, Jsc of 31.55 mA/cm2, FF of 88.64 % and an efficiency of 32.18%. The results obtained were encouraging and can serve as a guide to those involved in practical development of solar cells.
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利用SCAPS-1D优化吸收层和缓冲层性能提高CuIn1-xGxSe2太阳能电池性能
这项研究是我们之前发表的文章“使用一维SCAPS软件对铜铟镓二硒化太阳能电池进行数值模拟”的后续研究。利用与初始相同的仿真工具,对吸收体带隙、吸收体电子亲和度、缓冲层带隙、缓冲层电子亲和度和工作温度五个参数进行了优化。当吸收体带隙在0.8 eV和1.6 eV之间变化时,太阳能电池的效率增加,达到27.81%的峰值。这发生在吸收器带隙为1.4 eV时。该最优值下的其他光伏参数为:Voc为1.00 V, Jsc为31.99 mA/cm2, FF为87.47%。在4.20 eV到4.55 eV的范围内,在Voc为0.82 V、Jsc为37.96 mA/cm2、FF为84.99%、效率为26.36%的条件下,获得了4.45 eV的最优值。当缓冲带隙在1.6 eV和3.2 eV之间变化时,缓冲带隙的优化值为3.0 eV。该最优值的光伏参数为:Voc为0.80 V, Jsc为37.96 mA/cm2, FF为85.22%,效率为25.86%。研究了缓冲电子亲和力在4.00 ~ 4.40 eV之间的变化对缓冲电子亲和力的影响,发现在光伏参数下,其最佳值为4.05 eV, Voc为0.82 V, Jsc为37.96 mA/cm2, FF为84.98%,效率为26.36%。将这些参数的优化值用于太阳能电池的模拟,得到的器件性能为:Voc为1.11 V, Jsc为31.50 mA/cm2, FF为88.91%,效率为31.11%。在不同的工作温度下,优化后的器件在270 K时性能最佳,光伏(PV)值为1.15 V, Jsc为31.55 mA/cm2, FF为88.64%,效率为32.18%。所得结果令人鼓舞,可作为太阳能电池实际开发的指导。
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来源期刊
3 Biotech
3 Biotech BIOTECHNOLOGY & APPLIED MICROBIOLOGY-
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期刊介绍: 3 Biotech publishes the results of the latest research related to the study and application of biotechnology to: - Medicine and Biomedical Sciences - Agriculture - The Environment The focus on these three technology sectors recognizes that complete Biotechnology applications often require a combination of techniques. 3 Biotech not only presents the latest developments in biotechnology but also addresses the problems and benefits of integrating a variety of techniques for a particular application. 3 Biotech will appeal to scientists and engineers in both academia and industry focused on the safe and efficient application of Biotechnology to Medicine, Agriculture and the Environment.
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