Performance comparison of 3-phase DC/AC converters using SiC MOSFETs or SiC BJTs

I. Laird, Bosen Jin, N. McNeill, Xibo Yuan
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引用次数: 6

Abstract

The superior electrical and thermal properties of silicon carbide (SiC), when compared to silicon (Si), has lead to it being used in power converter designs that require high efficiency and low volume. However while choosing the semi-conductor material for these high performance designs is relatively simple, the specific type of SiC device (e.g. JFET, MOSFET or BJT) is not so straight-forward. This paper compares the performance of 2-level, 3-phase DC/AC converters that were constructed with SiC MOSFETs and then SiC BJTs. From this comparison it was shown that the SiC BJT converter, using proportional regenerative gate drivers, produced results similar to the MOSFET converter whose gate drivers had an RG = 12.5Ω. The results also showed that the SiC MOSFETs could be successfully driven with zero gate resistance and the reverse recovery energy losses of the MOSFET's body diode were minimal indicating that there is no need for an additional external Schottky diode unlike the SiC BJT.
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使用SiC mosfet或SiC BJTs的三相DC/AC变换器的性能比较
与硅(Si)相比,碳化硅(SiC)具有优越的电学和热学性能,因此它被用于需要高效率和低体积的功率转换器设计中。然而,虽然为这些高性能设计选择半导体材料相对简单,但特定类型的SiC器件(例如JFET, MOSFET或BJT)并不是那么简单。本文比较了由SiC mosfet和SiC BJTs构成的2电平、3相DC/AC变换器的性能。从这个比较中可以看出,使用比例再生栅极驱动器的SiC BJT变换器产生的结果类似于栅极驱动器RG = 12.5Ω的MOSFET变换器。结果还表明,SiC MOSFET可以在零栅极电阻下成功驱动,MOSFET主体二极管的反向恢复能量损失最小,表明不需要像SiC BJT那样额外的外部肖特基二极管。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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