Zoe C. M. Davidson, J. Rorison, S. Sweeney, C. Broderick
{"title":"Strain-balanced GaAs1−xBix/GaNyAs1−y W-type quantum wells for GaAs-based 1.3–1.6 µm lasers","authors":"Zoe C. M. Davidson, J. Rorison, S. Sweeney, C. Broderick","doi":"10.1109/NUSOD52207.2021.9541434","DOIUrl":null,"url":null,"abstract":"Highly-mismatched alloys constitute a promising approach to extend the operational range of GaAs-based quantum well (QW) lasers to telecom wavelengths. This is challenging using type-I QWs due to the difficulty to incorporate sufficient N or Bi via epitaxial growth. To overcome this, we investigate a novel class of strain-compensated type-II QWs combining electron-confining, tensile strained GaN<inf>y</inf>As<inf>1−y</inf> and hole-confining, compressively strained GaAs<inf>1−x</inf>Bi<inf>x</inf> layers. We systematically analyse the optoelectronic properties of W-type GaAs<inf>1−x</inf>Bi<inf>x</inf>/GaN<inf>y</inf>As<inf>1−y</inf> QWs, and identify paths to optimise their threshold characteristics. Solving the multi-band k•p Schrödinger equation self-consistently with Poisson’s equation highlights the importance of electrostatic confinement in determining the optical and differential gain of these QWs. Our calculations demonstrate that GaAs<inf>1−x</inf>Bi<inf>x</inf>/GaN<inf>y</inf>As<inf>1−y</inf> QWs offer broad scope for band structure engineering, with W-type structures presenting the possibility to combine high long-wavelength gain with the intrinsically low non-radiative Auger recombination rates of type-II QWs.","PeriodicalId":6780,"journal":{"name":"2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"4 1","pages":"5-6"},"PeriodicalIF":0.0000,"publicationDate":"2021-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NUSOD52207.2021.9541434","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
Highly-mismatched alloys constitute a promising approach to extend the operational range of GaAs-based quantum well (QW) lasers to telecom wavelengths. This is challenging using type-I QWs due to the difficulty to incorporate sufficient N or Bi via epitaxial growth. To overcome this, we investigate a novel class of strain-compensated type-II QWs combining electron-confining, tensile strained GaNyAs1−y and hole-confining, compressively strained GaAs1−xBix layers. We systematically analyse the optoelectronic properties of W-type GaAs1−xBix/GaNyAs1−y QWs, and identify paths to optimise their threshold characteristics. Solving the multi-band k•p Schrödinger equation self-consistently with Poisson’s equation highlights the importance of electrostatic confinement in determining the optical and differential gain of these QWs. Our calculations demonstrate that GaAs1−xBix/GaNyAs1−y QWs offer broad scope for band structure engineering, with W-type structures presenting the possibility to combine high long-wavelength gain with the intrinsically low non-radiative Auger recombination rates of type-II QWs.