Remarkable low-energy properties of the pseudogapped semimetal Be5Pt

L. Fanfarillo, J. Hamlin, R. Hennig, A. Hire, P. Hirschfeld, Jungsoo Kim, Jinhyuk Lim, Y. Quan, G. Stewart, S. Xie
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引用次数: 1

Abstract

We report measurements and calculations on the properties of the intermetallic compound Be$_5$Pt. High-quality polycrystalline samples show a nearly constant temperature dependence of the electrical resistivity over a wide temperature range. On the other hand, relativistic electronic structure calculations indicate the existence of a narrow pseudogap in the density of states arising from accidental approximate Dirac cones extremely close to the Fermi level. A small true gap of order 3 meV is present at the Fermi level, yet the measured resistivity is nearly constant from low to room temperature. We argue that this unexpected behavior can be understood by a cancellation of the energy dependence of density of states and relaxation time due to disorder, and discuss a model for electronic transport. With applied pressure, the resistivity becomes semiconducting, consistent with theoretical calculations that show that the band gap increases with applied pressure. We further discuss the role of Be inclusions in the samples.
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伪叠半金属Be5Pt的显著低能特性
本文报道了金属间化合物Be$_5$Pt的性质的测量和计算。高质量的多晶样品在很宽的温度范围内表现出电阻率几乎恒定的温度依赖性。另一方面,相对论电子结构计算表明,在非常接近费米能级的偶然近似狄拉克锥产生的态密度中存在狭窄的赝隙。在费米能级上存在一个3 meV量级的小间隙,但测量到的电阻率从低温到室温几乎是恒定的。我们认为这种意想不到的行为可以通过消除态密度和无序弛豫时间的能量依赖来理解,并讨论了电子输运的模型。随着施加压力,电阻率变为半导体,这与理论计算一致,表明带隙随着施加压力而增加。我们进一步讨论了铍包裹体在样品中的作用。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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