Implementation of a new coding scheme for improving the SET operations in Phase Change Memory (PCM)

M. Mohseni
{"title":"Implementation of a new coding scheme for improving the SET operations in Phase Change Memory (PCM)","authors":"M. Mohseni","doi":"10.31763/aet.v2i2.1006","DOIUrl":null,"url":null,"abstract":"Among Non-Volatile Memories (NVMs), PCMs are considered the best alternative to DRAM (dynamic random-access memories). As a result of its superior performance and scalability, there are several advantages over DRAM, including lower leakage and energy consumption, higher cell number, and smaller cells. This kind of memory does, however, suffer from a long write latency. In this article, we present a technique to reduce write latency by reducing the number of SET operations. The proposed method is an improved Write Time Speed-up (WTS) code scheme. In the proposed scheme, a new code based on hamming weight is given, and an appropriate algorithm is written to reduce the number of SET operations. Compared with current methods, the proposed scheme decreased SET and RESET operations by 3.9 percent, SET operations by 3.3 percent, and power consumption by 2.6 percent. Visual Basic 6 and GEM 5 simulations are used to simulate the suggested method","PeriodicalId":21010,"journal":{"name":"Research Journal of Applied Sciences, Engineering and Technology","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2023-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Research Journal of Applied Sciences, Engineering and Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.31763/aet.v2i2.1006","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

Abstract

Among Non-Volatile Memories (NVMs), PCMs are considered the best alternative to DRAM (dynamic random-access memories). As a result of its superior performance and scalability, there are several advantages over DRAM, including lower leakage and energy consumption, higher cell number, and smaller cells. This kind of memory does, however, suffer from a long write latency. In this article, we present a technique to reduce write latency by reducing the number of SET operations. The proposed method is an improved Write Time Speed-up (WTS) code scheme. In the proposed scheme, a new code based on hamming weight is given, and an appropriate algorithm is written to reduce the number of SET operations. Compared with current methods, the proposed scheme decreased SET and RESET operations by 3.9 percent, SET operations by 3.3 percent, and power consumption by 2.6 percent. Visual Basic 6 and GEM 5 simulations are used to simulate the suggested method
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一种改进相变存储器(PCM)中SET操作的新编码方案的实现
在非易失性存储器(nvm)中,pcm被认为是动态随机存取存储器(DRAM)的最佳替代品。由于其优越的性能和可扩展性,与DRAM相比有几个优势,包括更低的泄漏和能耗、更高的单元数和更小的单元。然而,这种类型的内存确实有很长的写入延迟。在本文中,我们介绍了一种通过减少SET操作的数量来减少写延迟的技术。该方法是一种改进的写时间加速(WTS)编码方案。在该方案中,给出了一种基于汉明权值的新编码,并编写了一种合适的算法来减少SET操作的次数。与目前的方法相比,所提出的方案将SET和RESET操作减少3.9%,SET操作减少3.3%,功耗减少2.6%。利用Visual Basic 6和GEM 5仿真对所提出的方法进行了仿真
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