Calculation of the thermodynamic voltage limit of CdSeTe solar cells

A. Onno, A. Danielson, Carey Reich, Anna Kindvall, W. Weigand, A. Munshi, Siming Li, D. Kuciauskas, W. Sampath, Z. Holman
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引用次数: 3

Abstract

The first step to understand the origin of losses in any photovoltaic solar cell is to determine the fundamental thermodynamic efficiency and voltage limits of such a device. In this contribution, we detail techniques to calculate the voltage limit in the case of cadmium selenium telluride (CdSeTe) solar cells, and how approaches based on bandgap alone—i.e., the Shockley-Queisser approach with step-function absorptance—can overestimate the thermodynamic open-circuit voltage limit $V_{oc,ideal}$. This is particularly true for arsenic-doped samples, which tend to exhibit below-bandgap absorptance.
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CdSeTe太阳能电池热力学电压极限的计算
了解任何光伏太阳能电池损耗来源的第一步是确定这种设备的基本热力学效率和电压限制。在这篇文章中,我们详细介绍了在碲化镉硒(CdSeTe)太阳能电池的情况下计算电压极限的技术,以及如何仅基于带隙的方法。,采用阶跃函数吸收的Shockley-Queisser方法可以高估热力学开路电压极限$V_{oc,理想}$。对于砷掺杂的样品尤其如此,它倾向于表现出低于带隙的吸收。
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