T. Hayashida, K. Endo, Y. Liu, T. Kamei, T. Matsukawa, S. Ouchi, K. Sakamoto, J. Tsukada, Y. Ishikawa, H. Yamauchi, A. Ogura, M. Masahara
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引用次数: 1
Abstract
We have demonstrated the effect of the resistivity reduction of the ALD-TiN film using TDMAT precursor by modifying the NH3 process (both initial exposure and PDA processes). It was found that the resistivity of the ALD TiN was significantly reduced by extending tNH3 and increasing TPDA by 700°C. Moreover, by employing the NH3 PDA, an increase in TiN peak intensity was detected from Ti 2p by XPS analysis and Ti : N ratio of approximately 1∶1 was achieved. As a result of the evaluation of the electrical characteristics of TiN-gate MOSFETs, superior performance was achieved in the case of ALD TiN.
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