High wet-etch resistance SiO2 films deposited by plasma-enhanced atomic layer deposition with 1,1,1-tris(dimethylamino)disilane

Abstract

Figure 1. (a) Molecular structure of 1,1,1-tris(dimethylamino)disilane (TADS). The Si-Si bond can provide a higher molecular polarity and surface reactivity, which can be helpful for high-quality ALD SiO2 films. (b) In the temperature range of 115–390 C, TADS exhibits higher or at least comparable GPC in comparison with other aminosilane precursors. (c) The SiO2 films of TADS have not only high bulk film densities (< 2.38 g/cm at 390 C), which is higher than that (2.27 g/cm) of LPCVD SiO2 or close to that (2.4 g/cm ) of thermal oxide, but also high wet etch resistance with a WER of >1.6 nm/min in 200:1 HF.