Photoluminescence analysis of shallow acceptor in CdTe films on GaAs(100) substrates

Abstract

In this study, photoluminescence (PL) measurements are performed for analyzing shallow acceptor states in undoped cadmium telluride (cid:28)lms on gallium arsenide substrates. PL and time-resolved photoluminescence spectra are analyzed in the vicinity of a 1.55 eV band. The residual impurity concentration in the undoped cadmium telluride (cid:28)lm is greater than 1.5 × 10 18 cm − 3 . By analyzing the peak shift of the 1.55 eV band as a function of time after pulsed excitation, the bound-to-bound reaction constant for the undoped cadmium telluride (cid:28)lm on a gallium arsenide substrate is estimated to be 2.4 × 10 7 s − 1 .