S. Ibuka, T. Osada, K. Jingushi, M. Suda, T. Nakamura, K. Yasuoka, S. Ishii
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引用次数: 4
Abstract
Fast SI-thyristor switching systems were designed and examined for environmental applications. The authors characterized three kinds of SI-thyristor with different device structures by using an extremely low inductance testing circuit, and confirmed the superiority of punch-through and flat-anode structures for fast turn-on characteristics. In order to accomplish fast turn-on operation, they developed a fast and high current gate-driving circuit for repetitive pulsed power applications. The SI-thyristors were successfully operated with a fall time of 35 ns and a current rising rate of 9.5/spl rlarr2/10/sup 10/ A/s. To clarify technical issues for higher voltage operation, they employed three SI-thyristors stacked in series to assemble the generator, which was operated with a repetition rate of 2 kHz.
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