Interdigitated Back Contact Technology as Final Evolution for Industrial Crystalline Single-Junction Silicon Solar Cell

IF 0.9 Q4 GEOCHEMISTRY & GEOPHYSICS Solar-Terrestrial Physics Pub Date : 2022-12-22 DOI:10.3390/solar3010001
R. Kopecek, F. Buchholz, V. Mihailetchi, J. Libal, J. Lossen, Ning Chen, H. Chu, C. Peter, Tudor Timofte, A. Halm, Yonggang Guo, X. Qu, Xiang Wu, Jiaqing Gao, Peng Dong
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引用次数: 2

Abstract

We present our own Interdigitated Back Contact (IBC) technology, which was developed at ISC Konstanz and implemented in mass production with and at SPIC Solar in Xining, China, with production efficiencies of over 24%. To our knowledge, this is the highest efficiency achieved in the mass production of crystalline silicon solar cells without the use of charge-carrier-selective contacts. With an adapted screen-printing sequence, it is possible to achieve open-circuit voltages of over 700 mV. Advanced module technology has been developed for the IBC interconnection, which is ultimately simpler than for conventional double-sided contacted solar cells. In the next step, we will realize low-cost charge-carrier-selective contacts for both polarities in a simple sequence using processes developed and patented at ISC Konstanz. With the industrialisation of this process, it will be possible to achieve efficiencies well above 25% at low cost. We will show that with the replacement of silver screen-printed contacts by copper or aluminium metallisation, future IBC technology will be the end product for the PV market, as it is the best performing c-Si technology, leading to the lowest cost of electricity, even in utility-scale applications.
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交叉背触技术是工业晶体单结硅太阳能电池的最终发展方向
我们展示了我们自己的interdigised Back Contact (IBC)技术,该技术是在康斯坦茨ISC公司开发的,并在中国西宁的SPIC Solar公司和SPIC Solar公司进行了大规模生产,生产效率超过24%。据我们所知,这是在不使用电荷载流子选择性触点的情况下大规模生产晶体硅太阳能电池所达到的最高效率。采用合适的丝网印刷顺序,可以实现超过700毫伏的开路电压。先进的模块技术已经开发用于IBC互连,它最终比传统的双面接触太阳能电池更简单。下一步,我们将利用康斯坦茨ISC开发并获得专利的工艺,以简单的顺序实现两个极性的低成本电荷载流子选择触点。随着该工艺的工业化,将有可能以低成本实现远高于25%的效率。我们将展示,随着铜或铝金属化取代银丝网印刷触点,未来的IBC技术将成为光伏市场的最终产品,因为它是性能最好的c-Si技术,即使在公用事业规模的应用中,也能实现最低的电力成本。
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来源期刊
Solar-Terrestrial Physics
Solar-Terrestrial Physics GEOCHEMISTRY & GEOPHYSICS-
CiteScore
1.50
自引率
9.10%
发文量
38
审稿时长
12 weeks
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