Deformation-Induced Electronic Structure Changes in Boron Nitride Nanotubes

Y. Kinoshita, N. Ohno
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引用次数: 1

Abstract

Electronic structures of (6,0), (8,0), and (10,0) single-walled boron nitride nanotubes (SWBNNTs) under tension, torsion and flattening are investigated using first-principles calculations. Energy bands and charge distributions of the SWBNNTs are calculated within the density-functional theory, and forces required to deform the SWBNNTs are estimated from the energy variation with deformation. Our calculations show that the tension, torsion and flattening decrease energy gaps of the SWBNNTs because of a decrease in the energy of the conduction band minimum (CBM). The decrease in the CBM energy is caused by an overlap of CBM charge densities between boron atoms. It is found that the flattening deformation leads to the larger decrease in energy gaps of the SWBNNTs with the smaller force than the tension and torsion.
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变形诱导的氮化硼纳米管电子结构变化
利用第一性原理计算研究了(6,0)、(8,0)和(10,0)单壁氮化硼纳米管(SWBNNTs)在张力、扭转和展平作用下的电子结构。利用密度泛函理论计算了swbnnt的能带和电荷分布,并根据能量随变形的变化估计了swbnnt变形所需的力。我们的计算表明,由于导带最小值(CBM)的能量降低,张力、扭转和压平减小了swbnnt的能隙。硼原子间CBM电荷密度的重叠引起了CBM能量的降低。结果表明,扁化变形导致swbnnt的能隙减小幅度较大,而拉力和扭转作用的力较小。
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