Design and Integration of Beyond-10MHz High Switching Frequency DC-DC Converter

K. Miyaji
{"title":"Design and Integration of Beyond-10MHz High Switching Frequency DC-DC Converter","authors":"K. Miyaji","doi":"10.1587/transele.2021cti0001","DOIUrl":null,"url":null,"abstract":"SUMMARY There are continuous and strong demands for the DC-DC converter to reduce the size of passive components and increase the system power density. Advances in CMOS processes and GaN FETs enabled the switching frequency of DC-DC converters to be beyond 10MHz. The ad-vancements of 3-D integrated magnetics will further reduce the footprint. In this paper, the overview of beyond-10MHz DC-DC converters will be provided first, and our recent achievements are introduced focusing on 3D- integration of Fe-based metal composite magnetic core inductor, and GaN FET","PeriodicalId":13259,"journal":{"name":"IEICE Trans. Electron.","volume":"47 1","pages":"521-533"},"PeriodicalIF":0.0000,"publicationDate":"2022-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEICE Trans. Electron.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1587/transele.2021cti0001","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

Abstract

SUMMARY There are continuous and strong demands for the DC-DC converter to reduce the size of passive components and increase the system power density. Advances in CMOS processes and GaN FETs enabled the switching frequency of DC-DC converters to be beyond 10MHz. The ad-vancements of 3-D integrated magnetics will further reduce the footprint. In this paper, the overview of beyond-10MHz DC-DC converters will be provided first, and our recent achievements are introduced focusing on 3D- integration of Fe-based metal composite magnetic core inductor, and GaN FET
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
超10mhz高开关频率DC-DC变换器的设计与集成
减小无源元件的尺寸,提高系统功率密度,对DC-DC变换器的需求持续而强烈。CMOS工艺和GaN场效应管的进步使DC-DC转换器的开关频率超过10MHz。3d集成磁学的进步将进一步减少占地面积。本文首先概述了10mhz以上的DC-DC变换器,重点介绍了我们在铁基金属复合磁芯电感和氮化镓场效应管三维集成方面的最新研究成果
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Vapor Deposition of Fluoropolymer Thin Films for Antireflection Coating Fundamental Study on Grasping Growth State of Paddy Rice Using Quad-Polarimetric SAR Data Millimeter-Wave Single-Pixel Imaging Using Electrically-Switchable Liquid-Crystal Mask Approaches to High Performance Terahertz-Waves Emitting Devices Utilizing Single Crystals of High Temperature Superconductor Bi2Sr2CaCu2O8+δ Design and Analysis of Si/CaF2 Near-Infrared (λ∼1.7µm) DFB Quantum Cascade Laser for Silicon Photonics
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1