CORRELATION OF THE SURFACE STRUCTURE OF THE RuO2/TiAND TiO2 /TiFILMS WITH ELECTROCHEMICAL IMPEDANCE DATA

O. Linyucheva, K. Pershina
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Abstract

The surface structure and nature of the capacitance formation of RuO2/Ti and TiO2 /Ti films are discussed. The factors affecting the reversibility of the adsorption-desorption processes of oxygen on the surface of RuO2/Ti and TiO2 /Ti films are described. The influence of the geometry of the pore, ruthenium content, thickness of the films, and the capacitance value of oxide films was studied using electron microscopy and electrochemical impedance spectroscopy. The changes in pore content and their geometry depending on Ru concentration are fixed by electron microscopy. The changing capacitance and capacitance dispersion in a wide frequency range was used to obtain 3D images of the film's surface. A scheme of the adsorption-absorption ratio changing in relation to the pore’s structure of the films was proposed. The study of the composition, morphological structure and electrochemical behaviour of RuO2/Ti and TiO2 /Ti films determined the impact of the pore shape of surface films on the adsorption-absorption ratio of oxygen, which regulated technical data of sensors. By changing the capacitance and capacitance dispersion in a wide frequency range, it was proposed to obtain 3D images of the surface. It was found that decrease of DEL capacitance has following relationships: large V-shaped pores on the boundary of titanium base and oxide film and on the surface of film > small V-shaped pores on the boundary of titanium base and oxide film, and large pores on the surface of film > rectangular-shaped pores on the boundary of titanium base and oxide film and small V-shaped pores on the surface of film. The formation of the pore geometry and surface structure is dependent on the ration of ruthenium and the thickness of films. So, it is possible to change the morphological and electrochemical properties of sensors by the regulation of ruthenium content.
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RuO2/ tiv和TiO2 / tiv薄膜表面结构与电化学阻抗数据的相关性
讨论了RuO2/Ti和TiO2 /Ti薄膜的表面结构和电容形成的性质。描述了影响氧在RuO2/Ti和TiO2 /Ti薄膜表面吸附-解吸过程可逆性的因素。利用电子显微镜和电化学阻抗谱研究了孔的几何形状、钌含量、膜的厚度和氧化膜的电容值对氧化膜性能的影响。通过电子显微镜可以确定孔隙含量及其几何形状随钌浓度的变化。利用宽频率范围内电容和电容色散的变化获得薄膜表面的三维图像。提出了吸附-吸收比随膜孔结构的变化规律。通过对RuO2/Ti和TiO2 /Ti薄膜的组成、形态结构和电化学行为的研究,确定了表面薄膜的孔隙形状对氧气吸附-吸收比的影响,从而调节传感器的技术数据。通过在宽频率范围内改变电容和电容色散来获得表面的三维图像。结果发现,DEL电容的减小具有如下关系:钛基与氧化膜边界及膜表面上的大v型孔>钛基与氧化膜边界上的小v型孔,膜表面上的大孔>钛基与氧化膜边界上的矩形孔和膜表面上的小v型孔。孔隙几何形状和表面结构的形成取决于钌的含量和膜的厚度。因此,通过调节钌含量来改变传感器的形态和电化学性能是可能的。
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