{"title":"Electrical and Electromechanical Characteristics of Nanoassembled Carbon Nanotube Thin Film Resistors on Flexible Substrates","authors":"W. Xue, T. Cui","doi":"10.1109/SENSOR.2007.4300313","DOIUrl":null,"url":null,"abstract":"We report the fabrication of single-walled carbon nanotube (SWNT) thin-film transistors on plastic substrates with layer-by-layer self-assembly. The resistance of the SWNT thin film decreases when the number of assembled SWNT layers increases. Increasing the substrate bending angle greatly decreases the resistance of the SWNT thin film. The resistance changes of thin films containing 14 and 16 SWNT layers are measured as 38.2% and 47.1%, which are more than 10 times higher than silicon. The observed \"piezoresistive\" phenomenon of the assembled SWNT thin films creates opportunities for highly sensitive sensors and electronic devices in many areas.","PeriodicalId":23295,"journal":{"name":"TRANSDUCERS 2007 - 2007 International Solid-State Sensors, Actuators and Microsystems Conference","volume":"45 1","pages":"1047-1050"},"PeriodicalIF":0.0000,"publicationDate":"2007-06-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"TRANSDUCERS 2007 - 2007 International Solid-State Sensors, Actuators and Microsystems Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SENSOR.2007.4300313","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 7
Abstract
We report the fabrication of single-walled carbon nanotube (SWNT) thin-film transistors on plastic substrates with layer-by-layer self-assembly. The resistance of the SWNT thin film decreases when the number of assembled SWNT layers increases. Increasing the substrate bending angle greatly decreases the resistance of the SWNT thin film. The resistance changes of thin films containing 14 and 16 SWNT layers are measured as 38.2% and 47.1%, which are more than 10 times higher than silicon. The observed "piezoresistive" phenomenon of the assembled SWNT thin films creates opportunities for highly sensitive sensors and electronic devices in many areas.
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