V. Harutyunyan, E. Aleksanyan, E. Hakhverdyan, N. Grigoryan, V. Baghdasaryan, V. Makhov, M. Kirm
{"title":"Luminescence and radiation defects in irradiated ruby","authors":"V. Harutyunyan, E. Aleksanyan, E. Hakhverdyan, N. Grigoryan, V. Baghdasaryan, V. Makhov, M. Kirm","doi":"10.1109/OMEE.2012.6464800","DOIUrl":null,"url":null,"abstract":"The excitations of luminescence in irradiated and non-irradiated ruby crystals are investigated by means of highly polarized synchrotron radiation. In the VUV luminescence spectra the existence of quick and slow emission was observed in irradiated and nonirradiated crystals. The luminescence bands with maximum at 3.8 eV are produced by F+ centers. A new type of quick luminescence was established for the band at 4.6 eV. It is called cross-luminescence and is connected with the recombination of valence band electrons with holes in low-lying core levels. It is shown that the band at 3.0 eV is not due to anionic centers (F-centers), but is determined by a short lifetime emission center.","PeriodicalId":6332,"journal":{"name":"2012 IEEE International Conference on Oxide Materials for Electronic Engineering (OMEE)","volume":"26 1","pages":"172-173"},"PeriodicalIF":0.0000,"publicationDate":"2012-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE International Conference on Oxide Materials for Electronic Engineering (OMEE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/OMEE.2012.6464800","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The excitations of luminescence in irradiated and non-irradiated ruby crystals are investigated by means of highly polarized synchrotron radiation. In the VUV luminescence spectra the existence of quick and slow emission was observed in irradiated and nonirradiated crystals. The luminescence bands with maximum at 3.8 eV are produced by F+ centers. A new type of quick luminescence was established for the band at 4.6 eV. It is called cross-luminescence and is connected with the recombination of valence band electrons with holes in low-lying core levels. It is shown that the band at 3.0 eV is not due to anionic centers (F-centers), but is determined by a short lifetime emission center.