Numerical simulation for the high efficiency p-n Si solar cell with HT-EBL and ET-HBL

Abstract

The Hole Transport-Electron Blocking Layer (HT-EBL) and Electron Transport-Hole Blocking Layer (ET-HBL) are added on the front surface and back surface of the silicon wafer respectively for designing the high efficiency p-n homojunction Si solar cell in this simulation. The cell was simulated using A One-Dimensional Device Simulation Program for Analysis of Microelectronic and Photonic Structures (AMPS-1D) by varying the doping density and layer thickness of the p type and n type Si layer. It has been investigated that there have a great effect of doping density and layer thickness on the efficiency of solar cell and optimum efficiency has been achieved. The maximum efficiency of 28.198% has been investigated at the doping density of 1.0e+021 cm−3 and layer thickness of 8000 nm.