Mid-Infrared Nano-Tomography of Topological Insulator Surfaces

F. Mooshammer, F. Sandner, M. Huber, M. Zizlsperger, H. Weigand, M. Plankl, Christian Weyrich, M. Lanius, J. Kampmeier, G. Mussler, D. Grützmacher, J. Boland, T. Cocker, R. Huber
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Abstract

We retrieve the local dielectric function of a fewnanometer-thick surface layer on the three-dimensional topological insulator (Bi0.5 Sb0.5)2 Te3 using mid-infrared nanotomography. Thereby, we identify the contributions of two types of surface states: Band bending leads to an intersubband transition within a massive two-dimensional electron gas, which gives rise to a sharp resonance. Conversely, an additional broadband absorption background may be caused by the topologically protected surface states. Tracing the dielectric response across a nanostructure reveals local changes to the resonance frequency of the intersubband transition, pointing towards nanoscale fluctuations of the doping or the Bi-to-Sb-ratio.
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拓扑绝缘体表面的中红外纳米层析成像
利用中红外纳米层析成像技术反演了三维拓扑绝缘体(Bi0.5 Sb0.5)2 Te3表面几纳米厚层的局部介电函数。因此,我们确定了两种表面状态的贡献:能带弯曲导致大量二维电子气体内的子带间跃迁,从而产生尖锐的共振。相反,额外的宽带吸收背景可能由拓扑保护的表面状态引起。在纳米结构上追踪介电响应揭示了子带间跃迁共振频率的局部变化,指向掺杂或铋锑比的纳米级波动。
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