Magnetic Properties of Fe-M-O (M=Zr, Hf) Films with High Resistivity

IEEE Translation Journal on Magnetics in Japan Pub Date : 1994-11-01 DOI:10.1109/TJMJ.1994.4565994

Y. Hayakawa, K. Hirokawa, A. Makino

引用次数: 5

Abstract

The magnetic properties of Fe-M-O (M=Zr, Hf≫ films with high electrical resistivity, prepared by the rf magnetron sputtering technique in an Ar+O2 atmosphere, were investigated. In the as-deposited state, low coercivities (Hc) in the range 30 to 100 A/m were obtained for Fe-Hf-O, and 160 to 240 A/m for Fe-Zr-O, in the composition range characterized by an O/M ratio of between 3 and 4. After annealing under optimum conditions in an external field of 160 kA/m, the results obtained for Fe54.9Hf11O34.1 and Fe65.3Zr8.9O25.8 included a saturation magnetization (Bs) of 1.2 T, an Hc of 64 A/m, and a ¿ at 100 MHz of 1600 for the former, and a Bs of 1.3 T, Hc of 73 A/m and ¿ at 100 MHz of 1000 for the latter. Further, the electrical resistivities of the films were much higher than those of known metallic soft magnetic films.

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高电阻率Fe-M-O (M=Zr, Hf)薄膜的磁性能

研究了在Ar+O2气氛中采用射频磁控溅射技术制备的高电阻率Fe-M-O (M=Zr, Hf)薄膜的磁性能。在沉积态下，Fe-Hf-O的矫顽力较低，为30 ~ 100 A/m, Fe-Zr-O的矫顽力为160 ~ 240 A/m, O/ m比值为3 ~ 4。在160 kA/m的最佳外场条件下退火后，Fe54.9Hf11O34.1和Fe65.3Zr8.9O25.8的饱和磁化强度(Bs)为1.2 T, Hc为64 a /m, 100 MHz为1600;Fe65.3Zr8.9O25.8的饱和磁化强度(Bs)为1.3 T, Hc为73 a /m, 100 MHz为1000。此外，该薄膜的电阻率远高于已知的金属软磁薄膜。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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IEEE Translation Journal on Magnetics in Japan

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