Study and Calculation Electrical Properties of Silver Thin Layers by Four-Point Probe Method

Abstract

In this research Ag thin layers on silicon p-type substrate with crystal orientation (100) and 300, 360 and 400 nm thicknesses by thermal evaporation was deposited. Four-point probe and XRD analysis of surface layers consequently for study electrical properties included of sheet resistance, conductivity, resistivity and investigation of Ag phase formed, was done. As result XRD was shown that at 400 nm the best state of silver face-central cubic (FCC) structure with crystal orientation (200) was formed and by Deby-Scherrer formula distance between successive plates was calculated 8.94 nm. Four-point illustrated that sheet resistance and electrical resistivity with increase thickness, decreases while conductance increases. At 400 nm thickness Ag layer has the most conductivity and the lowest resistance.