J.P. André, E. Augarde, E. Dupont-Nivet, J.N. Patillon, P. Riglet, N. Mariel, D. Moroni, A. Valster
{"title":"III–V alloys and their potential for visible emitter applications","authors":"J.P. André, E. Augarde, E. Dupont-Nivet, J.N. Patillon, P. Riglet, N. Mariel, D. Moroni, A. Valster","doi":"10.1016/0146-3535(89)90015-4","DOIUrl":null,"url":null,"abstract":"<div><p>Atmospheric pressure organometallic vapor phase epitaxy is used for the growth of GaInP-AlGaInP lattice matched to GaAs substrate. The investigation of the GaInP/GaAs heterostructure has been carried out and mobility as high as 75 000 cm<sup>2</sup> V<sup>-1</sup>s<sup>-1</sup> for a sheet carrier concentration of 7.5 10<sup>11</sup> cm<sup>-2</sup> has been measured by Shubnikov-de Haas at 4 K. Red and yellow LED's have been obtained with emission wavelength of 670 nm and 576 nm respectively. Oxide stripe laser emitting at 660 nm in pulsed mode have been performed and present a threshold current density of 5 kA cm<sup>-2</sup>. Three ridge waveguide laser diode arrays with maximum output power of 108 mW have also been achieved.</p></div>","PeriodicalId":101046,"journal":{"name":"Progress in Crystal Growth and Characterization","volume":"19 1","pages":"Pages 97-105"},"PeriodicalIF":0.0000,"publicationDate":"1989-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0146-3535(89)90015-4","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Progress in Crystal Growth and Characterization","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/0146353589900154","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Atmospheric pressure organometallic vapor phase epitaxy is used for the growth of GaInP-AlGaInP lattice matched to GaAs substrate. The investigation of the GaInP/GaAs heterostructure has been carried out and mobility as high as 75 000 cm2 V-1s-1 for a sheet carrier concentration of 7.5 1011 cm-2 has been measured by Shubnikov-de Haas at 4 K. Red and yellow LED's have been obtained with emission wavelength of 670 nm and 576 nm respectively. Oxide stripe laser emitting at 660 nm in pulsed mode have been performed and present a threshold current density of 5 kA cm-2. Three ridge waveguide laser diode arrays with maximum output power of 108 mW have also been achieved.
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