Preparation and Thermoelectric Properties of Novel Tellurium-Based Glassy Semiconductors

Huan Zhang, Yaqi Zhang, P. Yu, Li-Min Wang, Gong Li
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引用次数: 4

Abstract

Abstract Vitrification of Tellurium-based(Te) chalcogenid semiconductors is explored as a new route to enhance their thermoelectric properties by maximizing the degree of structural disorder to produce the minimum thermal conductivity. Ga2Te3-SnTe systems are focused in this paper and the optimized glass-forming composition is identified. Complete bulk (Ga2Te3)34(SnTe)66 glass is successfully prepared by a spark plasma sintering technique and exhibited an ultralow low thermal conductivity and high Seebeck coefficient. Together with the tunable electrical conductivity, the newly obtained Ga2Te3-SnTe glasses broaden the research scope of Te-based semiconductor glasses and also provide a new option for the development of high-performance thermoelectric materials.
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新型碲基玻璃半导体的制备及其热电性能
摘要:碲基(Te)硫族半导体的玻璃化是提高其热电性能的新途径,通过最大化结构无序程度来产生最小的导热系数。本文重点研究了Ga2Te3-SnTe体系,并确定了最佳的玻璃形成成分。采用火花等离子烧结技术成功制备了完全块体(Ga2Te3)34(SnTe)66玻璃,该玻璃具有超低导热系数和高塞贝克系数。新获得的Ga2Te3-SnTe玻璃与可调谐的导电性一起,拓宽了te基半导体玻璃的研究范围,也为高性能热电材料的发展提供了新的选择。
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