A Method for Measuring the Resistivity of a Layered Semiconductor Perpendicular to the Layers

Machine learning and interpretation in neuroimaging : international workshop, MLINI 2011, held at NIPS 2011, Sierra Nevada, Spain, December 16-17, 2011 : revised selected and invited contributions. MLINI (Workshop) (2011 : Sierra Nevada... Pub Date : 1988-12-16 DOI:10.1002/PSSA.2211100232

F. Pomer, J. Navasquillo

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Abstract

The current distribution within a layered semiconductor sample when a potential difference is applied to two contacts deposited on opposite faces is obtained from the numerical solution for the potential. From this solution a method for determining the resistivity of the sample perpendicular to the layers is derived, when the resistivity along the layers is known. Aus der numerischen Losung fur das Potential wird die Stromverteilung in einer geschichteten Halbleiterprobe bestimmt, an der an zwei auf entgegengesetzten Flachen angebrachten Kontakten eine Potentialdifferenz gelegt wird. Aus dieser Losung wird eine Methode zur Bestimmung der Leitfahigkeit der Probe senkrecht zu den Schichten abgeleitet, wenn der Widerstand in Schichtrichtung bekannt ist.

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