{"title":"Comparative electrical performance and failure analysis of air-annealed ruthenium Schottky contacts on 6H-SiC and 4H-SiC","authors":"K. V. Munthali","doi":"10.1080/22243682.2018.1548303","DOIUrl":null,"url":null,"abstract":"Thin films of ruthenium (Ru) on 6-hexagonal silicon carbide (6H-SiC) and 4-hexagonal silicon carbide (4H-SiC) were analysed by Rutherford backscattering spectroscopy (RBS) at various annealing temp...","PeriodicalId":17291,"journal":{"name":"Journal of the Chinese Advanced Materials Society","volume":"6 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2018-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of the Chinese Advanced Materials Society","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1080/22243682.2018.1548303","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Thin films of ruthenium (Ru) on 6-hexagonal silicon carbide (6H-SiC) and 4-hexagonal silicon carbide (4H-SiC) were analysed by Rutherford backscattering spectroscopy (RBS) at various annealing temp...
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