Electron leakage effects on the efficiency droop in GaN-based light-emitting diodes

Abstract

Nitride-based light-emitting diodes suffer from a reduction (droop) of the internal quantum efficiency (IQE) with increasing injection current. Using advanced device simulation, we investigate the impact of electron leakage on the IQE droop for different properties of the electron blocker layer. We also find that the electron leakage decreases with increasing temperature, which contradicts common assumptions.