A. Syrbu, V. Yakovlev, G. Suruceanu, A. Mereutza, L. Mawst, A. Bhattacharya, M. Nesnidal, J. Lopez, D. Boetz
{"title":"ZnSe-facet-passivated InGaAs/InGaAsP/InGaP diode lasers of high cw power and \"wallplug\" efficiency","authors":"A. Syrbu, V. Yakovlev, G. Suruceanu, A. Mereutza, L. Mawst, A. Bhattacharya, M. Nesnidal, J. Lopez, D. Boetz","doi":"10.1049/EL:19960251","DOIUrl":null,"url":null,"abstract":"Summary form only given. We report on the cw performance of optimized facet-coated InGaAs/InGaAsP/InGaP (/spl lambda/=0.95 /spl mu/m) diode lasers as well as on the improvement in their performance as the facets are passivated by in-situ growth of ZnSe half-wave films. The results represent record-high values for both front-facet-emitted cw power: 2.9 W, as well as maximum cw wallplug efficiency: 54%.","PeriodicalId":22169,"journal":{"name":"Summaries of papers presented at the Conference on Lasers and Electro-Optics","volume":"32 1","pages":"78-79"},"PeriodicalIF":0.0000,"publicationDate":"1996-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"20","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Summaries of papers presented at the Conference on Lasers and Electro-Optics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1049/EL:19960251","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 20
Abstract
Summary form only given. We report on the cw performance of optimized facet-coated InGaAs/InGaAsP/InGaP (/spl lambda/=0.95 /spl mu/m) diode lasers as well as on the improvement in their performance as the facets are passivated by in-situ growth of ZnSe half-wave films. The results represent record-high values for both front-facet-emitted cw power: 2.9 W, as well as maximum cw wallplug efficiency: 54%.