Ju-Wan Lee, M. Jeong, H. Kwon, Byung-Gook Park, Hyungcheol Shin, Jong-Ho Lee
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引用次数: 2
Abstract
We have proposed new 3-D stacked NAND flash memory structure and investigated key characteristics in various S/D doping concentration, body doping types, body doping concentrations, and stored charge. Thanks to crystalline Si channel, we obtained higher current than that in poly-Si channel. We have shown the interference between adjacent BLs can be removed by using common S-B contact.
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