{"title":"Direct detectors for passive terahertz photodetecting systems based on Pb1−xSnxTe(In)","authors":"D. Khokhlov","doi":"10.1109/IRMMW-THZ.2011.6104934","DOIUrl":null,"url":null,"abstract":"Physical principles of operation of the photodetecting devices based on the group III-doped IV-VI semiconductors are presented. We report on the performance of lead telluride-based single direct terahertz detectors. Architecture of a system for passive terahertz vision of room-temperature objects is presented.","PeriodicalId":6353,"journal":{"name":"2011 International Conference on Infrared, Millimeter, and Terahertz Waves","volume":"40 1","pages":"1-1"},"PeriodicalIF":0.0000,"publicationDate":"2011-12-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 International Conference on Infrared, Millimeter, and Terahertz Waves","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRMMW-THZ.2011.6104934","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Physical principles of operation of the photodetecting devices based on the group III-doped IV-VI semiconductors are presented. We report on the performance of lead telluride-based single direct terahertz detectors. Architecture of a system for passive terahertz vision of room-temperature objects is presented.
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