Current-Induced Magnetization Switching of Exchange-Biased NiO Heterostructures Characterized by Spin-Orbit Torque

K. Grochot, Łukasz Karwacki, S. Łazarski, Witold Skowro'nski, J. Kanak, Wieslaw Powro'znik, P. Kuświk, M. Kowacz, F. Stobiecki, T. Stobiecki
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引用次数: 5

Abstract

In this work, we study magnetization switching induced by spin-orbit torque in heterostructures with variable thickness of heavy-metal layers W and Pt, perpendicularly magnetized Co layer and an antiferromagnetic NiO layer. Using current-driven switching, magnetoresistance and anomalous Hall effect measurements, perpendicular and in-plane exchange bias field were determined. Several Hall-bar devices possessing in-plane exchange bias from both systems were selected and analyzed in relation to our analytical switching model of critical current density as a function of Pt and W thickness, resulting in estimation of effective spin Hall angle and effective perpendicular magnetic anisotropy. Approximately one order of magnitude smaller critical switching current densities in W- than Pt-based Hall-bar devices were found due to a higher effective spin Hall angle in W structures. The current switching stability and training process are discussed in detail.
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用自旋-轨道转矩表征交换偏置NiO异质结构的电流感应磁化开关
本文研究了由自旋轨道转矩引起的变厚度重金属层W和Pt、垂直磁化Co层和反铁磁NiO层异质结构的磁化开关。利用电流驱动开关、磁阻和异常霍尔效应测量,确定了垂直和平面内交换偏置场。选择了两种体系中具有面内交换偏置的几个霍尔棒器件,并与临界电流密度作为Pt和W厚度函数的解析开关模型进行了分析,从而估计了有效自旋霍尔角和有效垂直磁各向异性。由于W结构的有效自旋霍尔角较高,因此W结构的临界开关电流密度比基于pt的霍尔棒器件小约一个数量级。详细讨论了电流开关的稳定性和训练过程。
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