A. Kanevce, J. Li, R. Crandall, M. Page, E. Iwaniczko
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引用次数: 1
Abstract
This work presents simulations of photo-excited minority carriers decay in HIT cells. The photo-carrier decay is analyzed as a function of light pulse duration, c-Si material quality and external parameters such as voltage bias and temperature. The simulation results can help interpret capacitance transient as well as photovoltage decay measurements.
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