Precise control of Jeff=12 magnetic properties in Sr2IrO4 epitaxial thin films by variation of strain and thin film thickness

S. Geprägs, B. Skovdal, M. Scheufele, M. Opel, D. Wermeille, P. Thompson, A. Bombardi, V. Simonet, S. Grenier, P. Lejay, G. Chahine, D. Quintero-Castro, R. Gross, D. Mannix
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引用次数: 1

Abstract

We report on a comprehensive investigation of the effects of strain and film thickness on the structural and magnetic properties of epitaxial thin films of the prototypal $J_\mathrm{eff}=1/2$ compound Sr$_2$IrO$_4$ by advanced X-ray scattering. We find that the Sr$_2$IrO$_4$ thin films can be grown fully strained up to a thickness of 108 nm. By using X-ray resonant scattering, we show that the out-of-plane magnetic correlation length is strongly dependent on the thin film thickness, but independent of the strain state of the thin films. This can be used as a finely tuned dial to adjust the out-of-plane magnetic correlation length and transform the magnetic anisotropy from two-dimensional (2D) to three-dimensional (3D) behavior by incrementing film thickness. These results provide a clearer picture for the systematic control of the magnetic degrees of freedom in epitaxial thin films of Sr$_2$IrO$_4$ and bring to light the potential for a rich playground to explore the physics of $5d$-transition metal compounds.
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通过改变应变和薄膜厚度精确控制Sr2IrO4外延薄膜的Jeff=12磁性能
本文采用先进的x射线散射技术,全面研究了应变和薄膜厚度对原型$J_\ mathm {eff}=1/2$化合物Sr$_2$IrO$_4$外延薄膜结构和磁性的影响。我们发现Sr$_2$IrO$_4$薄膜可以完全应变生长到108 nm的厚度。通过x射线共振散射,我们发现面外磁相关长度与薄膜厚度密切相关,而与薄膜的应变状态无关。这可以作为一个微调表盘来调节面外磁相关长度,并通过增加薄膜厚度将磁各向异性从二维(2D)转变为三维(3D)行为。这些结果为Sr$_2$IrO$_4$外延薄膜的磁性自由度的系统控制提供了更清晰的图像,并为探索$5d$过渡金属化合物的物理学提供了丰富的平台。
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