A fully integrated Al2O3 trench capacitor DRAM for sub-100 nm technology

Technical digest. International Electron Devices Meeting Pub Date : 2002-12-08 DOI:10.1109/IEDM.2002.1175968

H. Seidl, M. Gutsche, U. Schroeder, A. Birner, T. Hecht, S. Jakschik, J. Luetzen, M. Kerber, S. Kudelka, T. Popp, A. Orth, H. Reisinger, A. Saenger, K. Schupke, B. Sell

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引用次数: 17

Abstract

For the first time, fully integrated 128 Mb trench DRAMs using Al/sub 2/O/sub 3/ as high-k node dielectric in silicon-insulator-silicon (SIS) capacitors were successfully fabricated. A highly manufacturable integration scheme for Al/sub 2/O/sub 3/ as node dielectric in trench capacitors was developed and successfully implemented in a 170 nm ground rule technology. A capacitance close to 50 fF/cell with leakage current well below 1 fA/cell was achieved, leading to significantly improved retention characteristics. 128 Mb DRAM devices with full functionality and excellent test yields were obtained. The scalability of this technology to smaller dimensions is demonstrated by the integration of ALD (Atomic Layer Deposition) Al/sub 2/O/sub 3/ into 110 nm ground rule trench capacitors. In addition, trench capacitors with Al/sub 2/O/sub 3/ on hemispherical grain (HSG) silicon were fabricated, exhibiting high capacitance enhancement with low leakage current.

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一种用于亚100纳米技术的完全集成的Al2O3沟槽电容DRAM

首次成功制备了采用Al/sub 2/O/sub 3/作为高k节点介电介质的全集成128mb沟槽dram。提出了一种高度可制造的Al/sub 2/O/sub 3/ as节点电介质沟槽电容器集成方案，并成功实现了170 nm基材工艺。电容接近50 fF/电池，漏电流远低于1 fA/电池，从而显著改善了保持特性。获得了功能齐全、测试产率优异的128mb DRAM器件。通过将ALD(原子层沉积)Al/sub 2/O/sub 3/集成到110 nm接地规则沟槽电容器中，证明了该技术在更小尺寸上的可扩展性。制备了Al/sub 2/O/sub 3/半球面晶硅沟槽电容器，具有高电容增强和低漏电流的特点。

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来源期刊

Technical digest. International Electron Devices Meeting

CiteScore

4.50

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0.00%

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