A. Semenov, O. Osadchuk, O. Semenova, K. Koval, S. Baraban, A. Savytskyi
{"title":"A Deterministic Chaos Ring Oscillator Based on a MOS Transistor Structure with Negative Differential Resistance","authors":"A. Semenov, O. Osadchuk, O. Semenova, K. Koval, S. Baraban, A. Savytskyi","doi":"10.1109/PICST47496.2019.9061330","DOIUrl":null,"url":null,"abstract":"The aim of the work is developing and investigating an electric circuit of a deterministic chaos ring oscillator having a delay element in a feedback loop and based on a MOS transistor structure with negative differential resistance. New circuits of active elements based on MOS transistor structures with electrically controlled parameters of static λ-type I-V curves for deterministic chaos ring oscillators have been proposed. Experimental facilities have been developed and results have been obtained after investigating static and dynamic I-V curves for the MOS transistor structures with negative resistance. Results of simulating the deterministic chaos ring oscillator based on the MOS transistor structure with negative differential resistance in PSPICE software have been obtained.","PeriodicalId":6764,"journal":{"name":"2019 IEEE International Scientific-Practical Conference Problems of Infocommunications, Science and Technology (PIC S&T)","volume":"14 1","pages":"709-714"},"PeriodicalIF":0.0000,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE International Scientific-Practical Conference Problems of Infocommunications, Science and Technology (PIC S&T)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PICST47496.2019.9061330","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5
Abstract
The aim of the work is developing and investigating an electric circuit of a deterministic chaos ring oscillator having a delay element in a feedback loop and based on a MOS transistor structure with negative differential resistance. New circuits of active elements based on MOS transistor structures with electrically controlled parameters of static λ-type I-V curves for deterministic chaos ring oscillators have been proposed. Experimental facilities have been developed and results have been obtained after investigating static and dynamic I-V curves for the MOS transistor structures with negative resistance. Results of simulating the deterministic chaos ring oscillator based on the MOS transistor structure with negative differential resistance in PSPICE software have been obtained.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
