Kai-Erik Elers, M. Ritala, M. Leskelä, Leena‐Sisko Johansson
{"title":"Atomic Layer Epitaxy Growth of AIN Thin Films","authors":"Kai-Erik Elers, M. Ritala, M. Leskelä, Leena‐Sisko Johansson","doi":"10.1051/JPHYSCOL:19955120","DOIUrl":null,"url":null,"abstract":"AlN thin films were grown by the Atomic Layer Epitaxy (ALE) technique employing AlCl 3 and NH 3 as precursors. A growth rate of 1.0 A/cycle was obtained in experiments carried out at 500 °C. The films deposited onto soda lime glass substrates were polycrystalline exhibiting a strong preferred orientation in the [001] direction. X-ray Photoelectron Spectroscopy (XPS) measurements revealed that the films contained oxygen and chlorine as impurities.","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":"156 1","pages":"1021-1027"},"PeriodicalIF":0.0000,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"10","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Le Journal De Physique Colloques","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1051/JPHYSCOL:19955120","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 10
Abstract
AlN thin films were grown by the Atomic Layer Epitaxy (ALE) technique employing AlCl 3 and NH 3 as precursors. A growth rate of 1.0 A/cycle was obtained in experiments carried out at 500 °C. The films deposited onto soda lime glass substrates were polycrystalline exhibiting a strong preferred orientation in the [001] direction. X-ray Photoelectron Spectroscopy (XPS) measurements revealed that the films contained oxygen and chlorine as impurities.
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