A pure-CMOS nonvolatile multi-context configuration memory for dynamically reconfigurable FPGAs

K. Tatsumura, Masato Oda, S. Yasuda
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引用次数: 5

Abstract

Multi-context configuration memory stores multiple sets of configuration data and changes the entire configuration of FPGA quickly, enabling enhancement of hardware utilization with dynamic reconfiguration architectures. The memory area for one set of configuration data should be much smaller than the computational resource it controls. In this paper, we propose a pure-CMOS, nonvolatile, and small-footprint multi-context configuration memory. The multi-context memory includes multiple 2Tr nonvolatile memory elements, which are programmed by channel hot-electron injection, and allows context switching in a single clock cycle. A primitive dynamically reconfigurable device having a lookup table and minimum interconnect backed by 16-bit 8-context configuration memory was fabricated by a 0.18 um CMOS process and its functionality was demonstrated. The 2Tr nonvolatile memory element is more than 4 times denser than 6Tr SRAM, enabling achievement of greater logic density. The pure-CMOS and nonvolatile features would enhance the attractiveness of the technology in many applications.
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用于动态可重构fpga的纯cmos非易失性多上下文配置存储器
多上下文配置存储器存储多组配置数据,并快速更改FPGA的整个配置,从而通过动态重构架构提高硬件利用率。一组配置数据的内存区域应该比它控制的计算资源小得多。在本文中,我们提出了一种纯cmos,非易失性和小占用的多上下文配置存储器。多上下文存储器包括多个2Tr非易失性存储器元件,其通过通道热电子注入编程,并允许在单个时钟周期内进行上下文切换。采用0.18 um CMOS工艺制作了一个具有查找表和最小互连的原始动态可重构器件,并对其功能进行了验证。2Tr非易失性存储器元件的密度是6Tr SRAM的4倍以上,可以实现更大的逻辑密度。纯cmos和非易失性的特性将增强该技术在许多应用中的吸引力。
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