Study the Effect of Cu Doping on Optical and Structural Properties of NiO Thin Films

S. Benramache, B. Benhaoua, Hanane Guezzoun
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引用次数: 2

Abstract

Abstract In this work, copper doped nickel oxide as the thin films have been elaborated by a spin coating method, the nickel chloride hexahydrate (0.8M) and copper (II) chloride dehydrate (Cu/Ni = 0, 2.15, 4.3, 8.6 and 12.9 At.%) were used to prepare the Cu doped NiO thin films. The Cu doped NiO thin films were heated at a crystallization temperature of 600 °C with 2 h. The obtained thin films by spin coater method have a film thickness in the order of 400 nm. The prepared Cu doped NiO thin films have a polycrystalline with cubic structure (200) peak was observed. The optical property shows that the prepared thin films have a transmittance of about 70 %. The Cu doped NiO thin films have minimum bandgap energy is 3.85 eV at 12.9 at.%, the thin film deposited at 8.6 at.% has the highest value of Urbach energy is 425 meV. The Cu doped NiO thin films have a high electrical conductivity of 8.6 at% it is 7 (Ω.cm)−1. The prepared Cu doped NiO thin film was suitable for gas sensing applications due to the existing phase and higher electrical conductivity.
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铜掺杂对NiO薄膜光学和结构性能影响的研究
摘要本文采用自旋镀膜的方法,制备了六水氯化镍(0.8M)和氯化铜(II)脱水(Cu/Ni = 0、2.15、4.3、8.6和12.9 At.%)作为掺杂铜的氧化镍薄膜。将Cu掺杂NiO薄膜在600℃结晶温度下加热2 h,得到的薄膜厚度约为400 nm。制备的Cu掺杂NiO薄膜具有立方结构的多晶(200)峰。光学性能表明,制备的薄膜透光率约为70%。在12.9 at处,Cu掺杂NiO薄膜的带隙能量最小为3.85 eV。%,薄膜在8.6 at沉积。的乌尔巴赫能量最大值为425 meV。Cu掺杂NiO薄膜的电导率高达8.6%,为7 (Ω.cm)−1。所制备的Cu掺杂NiO薄膜由于存在相和较高的导电性,适合气敏应用。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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