{"title":"Analog/RF performance comparison of junctionless and dopingless field effect transistor","authors":"Chitrakant Sahu, Jaydeep Singh Parmar","doi":"10.1109/COMPTELIX.2017.8004041","DOIUrl":null,"url":null,"abstract":"In this paper, device performance metricsofjunctionless (JL) and dopingless (DL) field effect transistors (FETs) for analog and radio-frequency application are evaluated using technology computer added design (TCAD) tool. It is observed that the DL-FET offers 17% enhancement in ON-current and achieves 1.5 times cutoff frequency along with 10 dB improvement in intrinsic voltage gain in comparison to JL-FET. Hence, DL-FET alleviates the trade-off by simultaneous improvement in gain and bandwidth with less fabrication complexity compare to its device counterpart.","PeriodicalId":6917,"journal":{"name":"2017 International Conference on Computer, Communications and Electronics (Comptelix)","volume":"59 1","pages":"606-611"},"PeriodicalIF":0.0000,"publicationDate":"2017-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 International Conference on Computer, Communications and Electronics (Comptelix)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/COMPTELIX.2017.8004041","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
In this paper, device performance metricsofjunctionless (JL) and dopingless (DL) field effect transistors (FETs) for analog and radio-frequency application are evaluated using technology computer added design (TCAD) tool. It is observed that the DL-FET offers 17% enhancement in ON-current and achieves 1.5 times cutoff frequency along with 10 dB improvement in intrinsic voltage gain in comparison to JL-FET. Hence, DL-FET alleviates the trade-off by simultaneous improvement in gain and bandwidth with less fabrication complexity compare to its device counterpart.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
