Monolithic 0.35-μm CMOS Cantilever for Mass Sensing in the Attogram Range with Self-Excitation

J. Verd, A. Uranga, J. Teva, G. Abadal, F. Torres, J. Arcamone, J.L. Lopez, F. Pérez-Murano, J. Fraxedas, J. Esteve, N. Barniol
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引用次数: 1

Abstract

A monolithic mass sensor with attogram resolution in air conditions has been fabricated using a conventional 0.35-μm CMOS process. The mass sensor is based on an electrostatically excited resonating sub-micrometer scale cantilever integrated with full custom designed CMOS electronics for sensing purposes and to self-excite the cantilever allowing its use in system-on-chip applications. The devices have been calibrated obtaining an experimental sensitivity of around 6 × 10-11 g/cm2 Hz equivalent to 0.9 ag/Hz for locally deposited mass. The results reported in this paper represent an improvement from previous works in terms of sensitivity, resolution and fabrication process complexity.
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单片0.35 μm CMOS悬臂梁用于自激阿图范围内的质量传感
采用传统的0.35 μm CMOS工艺,制作了一种空气条件下具有阿图分辨率的单片质量传感器。质量传感器基于静电激发谐振亚微米级悬臂,集成了完全定制设计的CMOS电子器件,用于传感目的,并可以自激悬臂,从而可以在片上系统应用中使用。该装置已经过校准,实验灵敏度约为6 × 10-11 g/cm2 Hz,相当于局部沉积质量的0.9 ag/Hz。本文报道的结果在灵敏度、分辨率和制造工艺复杂性方面都比以往的工作有了改进。
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