Segregation to an (A0/2)[11̄0] edge dislocation in Cu0.1Ni0.9

R.W. Smith, R. Najafabadi , D.J. Srolovitz
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引用次数: 10

Abstract

Atomistic simulations of segregation to a dissociated (a0/2)[11̄0] edge dislocation in the solid solution alloy Cu0.1Ni0.9 have been performed. Segregation to the stacking fault between the partials is minimal. Results obtained with a general embedded atom method potential and one optimized for the NiCu system differ significantly. Simulations employing the optimized potentials show significantly more Cu segregation to the dislocation cores than do simulations performed with the general potentials. When the general potentials are employed, the Cu concentration around the dislocation is well described using classical segregation isotherms based upon the stress distribution around the dislocation, except in the dislocation core region. Deviations from the theoretically predicted segregation profile around the dislocation core are largest along the slip plane. When the optimized potentials are used, the deviations from the predicted segregation behavior are significantly larger. The large deviations associated with the optimized potentials were traced to the inadequacy of describing the local heat of segregation in terms of the elastic work σhΔV. This can be rectified by adding a term to the heat of segregation that explicitly includes the composition dependence. The failure of the classical segregation isotherm to describe the segregation behavior around a dislocation is associated with non-ideal alloy thermodynamics and the inadequacy of linear elasticity to appropriately describe the core region of the dislocation. The failure of the classical segregation isotherm within the core appears to result from the fact that the core atoms have different atomic coordination than those in the bulk material.

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Cu0.1Ni0.9中偏析为(A0/2)[11′0]边位错
本文对固溶合金Cu0.1Ni0.9中偏析到解离(a0/2)[11′0]边位错的原子模拟进行了研究。偏积断层之间的偏析是最小的。用一般嵌入原子法得到的电位与用NiCu体系优化得到的电位有显著差异。采用优化电位的模拟结果表明,与使用一般电位的模拟结果相比,采用优化电位的模拟结果表明,Cu向位错核的偏析程度显著提高。当采用一般电位时,除位错核心区域外,基于位错周围应力分布的经典偏析等温线可以很好地描述位错周围的Cu浓度。与理论预测的位错核心周围偏析剖面的偏差沿滑移面最大。当使用优化电位时,与预测偏析行为的偏差明显较大。与优化势相关的大偏差可追溯到用弹性功σhΔV描述局部偏析热的不足。这可以通过在偏析热中添加一个明确包含组分依赖性的项来纠正。经典偏析等温线无法描述位错周围的偏析行为,与非理想合金热力学和线弹性不足以恰当描述位错核心区域有关。核内经典偏析等温线的失效似乎是由于核内原子的配位与体内原子的配位不同。
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