Characterizing and evaluating the impact of dislocations and grain boundaries on silicon solar cells

D. B. Needleman, H. Wagner, P. Altermatt, Z. Xiong, P. Verlinden, T. Buonassisi
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Abstract

High efficiency and low-cost, low-capex silicon substrates are necessary for the PV industry to grow to meet climate-driven deployment targets. The efficiency gap between the best devices using low-cost, low-capex substrates and monocrystalline silicon produced by the Czochralski method (CZ-Si) have shrunk recently. Here, we present numerical device simulations that show that current crystal growth, phosphorus diffusion gettering, and hydrogen passivation can produce low-cost, low-capex silicon with an efficiency potential well over 20%. We further show that incorporating these materials into higher efficiency architectures that operate at higher injection is likely to further improve their performance.
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表征和评估位错和晶界对硅太阳能电池的影响
高效率、低成本、低资本支出的硅基板对于光伏产业的发展是必要的,以满足气候驱动的部署目标。采用低成本、低资本支出衬底的最佳器件与采用CZ-Si法生产的单晶硅之间的效率差距最近已经缩小。在这里,我们提出了数值装置模拟,表明当前的晶体生长,磷扩散吸除和氢钝化可以生产低成本,低资本支出的硅,效率潜力远远超过20%。我们进一步表明,将这些材料结合到更高效率的架构中,在更高的注入下运行,可能会进一步提高它们的性能。
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