Junfu Liu , Zuhong Lu , Shiyong Zhao , Kongzhang Yang
{"title":"Conductivity and photoelectric response of electrodeposited thallic oxide films","authors":"Junfu Liu , Zuhong Lu , Shiyong Zhao , Kongzhang Yang","doi":"10.1016/S0968-5677(98)00070-4","DOIUrl":null,"url":null,"abstract":"<div><p>Highly conductive polycrystalline and amorphous Tl<sub>2</sub>O<sub>3</sub> films are prepared by electrodeposition method. The resistivity of the polycrystalline film is lower than that of the amorphous one. A resisitivity of only 3.2×10<sup>-4</sup> <em><strong>Ω</strong></em> <!-->cm was obtained for the polycrystalline film. It is found that the electrodeposited Tl<sub>2</sub>O<sub>3</sub> films exhibit photoelectric response of n-type semiconductors. This photoelectric response may find use for further application of the Tl<sub>2</sub>O<sub>3</sub> films.</p></div>","PeriodicalId":22050,"journal":{"name":"Supramolecular Science","volume":"5 5","pages":"Pages 541-543"},"PeriodicalIF":0.0000,"publicationDate":"1998-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/S0968-5677(98)00070-4","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Supramolecular Science","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0968567798000704","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
Highly conductive polycrystalline and amorphous Tl2O3 films are prepared by electrodeposition method. The resistivity of the polycrystalline film is lower than that of the amorphous one. A resisitivity of only 3.2×10-4Ω cm was obtained for the polycrystalline film. It is found that the electrodeposited Tl2O3 films exhibit photoelectric response of n-type semiconductors. This photoelectric response may find use for further application of the Tl2O3 films.
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