Area optimization in 8T SRAM cell for low power consumption

M. S. Z. Sarker, M. Hossain, N. Hossain, M. Rasheduzzaman, Md. Ashraful Islam
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Abstract

Cache memory plays an important role in high speed electronic devices. SRAM is the key element of cache memory. Cache memory is used for their high speed and SRAM is the element which provides speed to the cache. So this work is mainly concentrated on the simulation and analysis of 8T SRAM cells and their comparative analysis of different parameters such as width to length ratio, capacitance and power consumption. All the simulation has been carried out using Microwind and DSCH2 EDA tool.
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8T SRAM单元的面积优化以实现低功耗
高速缓存存储器在高速电子器件中起着重要的作用。SRAM是高速缓存的关键部件。高速缓存存储器用于它们的高速,SRAM是为高速缓存提供速度的元件。因此本文主要对8T SRAM电池进行仿真分析,并对其宽长比、电容、功耗等不同参数进行对比分析。采用Microwind和DSCH2 EDA工具进行仿真。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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