Mobility of the electron in liquid and solid 3-methylpentane

G.F. Novikov, B.S. Yakovlev
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引用次数: 10

Abstract

The authors have investigated the current of electrical conductivity I induced by a pulse of 2 × 10−7 s of high energy electrons in 3-methylpentane (3MP) over the temperature range 94–296 K. The determination of the drift mobility of the excess electron u is based on measurement of the amplitude of I in conditions in which the lifetime of the excess electron in 3MP τ ⪢ 2 × 10−7 s and the total number of free charges q generated in the course of one pulse. In liquid 3MP q was measured by integrating I and in solid 3MP by integrating the current of thermostimulated conductivity on heating the sample to melting point. At T = 296 K the value u = 0·22 cm2 V−1 s−1 and agrees with the value obtained from measurements of the time of transit by the electron of the distance between electrodes d≈0·1 cm.

In the temperature interval from 94–296 K the value u monotonically changes from 10−8 to 0·22 cm2 V−1 s−1. In the region of the melting point, the values of u in liquid and solid 3MP are much the same, whereas the activation energy changes from 0·14 to 0·4 eV on passing from liquid to solid 3MP. The activation energy of the mobility of the electron in solid 3MP is connected with the energy of the thermal release of the electron from the deepest structural traps.

Extrapolation of the function u(T) by the Arrhenius law with an activation energy of 0·4 eV gives the value u ≈ 10−15 cm2 V−1 s−1 at 77 K which accords with the value obtained from measurement of the quasi-steady photo-conductivity and evaluation of the lifetime of the trapped electron in 3MP at 77 K.

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电子在液体和固体3-甲基戊烷中的迁移率
研究了3-甲基戊烷(3MP)中2 × 10−7 s高能电子脉冲在94 ~ 296 K温度范围内的电导率电流I。过量电子u漂移迁移率的测定是基于测量过量电子在3MP τ⪢中2 × 10−7 s的寿命和在一个脉冲过程中产生的自由电荷总数q的条件下I的振幅。在液体中,通过积分I来测量3MP q;在固体中,通过积分将样品加热至熔点时的热激电导率电流来测量3MP q。在T = 296 K时,u = 0.22 cm2 V−1 s−1,与电子在电极间距离d≈0.1 cm时的穿越时间测量值一致。在94 ~ 296 K温度区间内,u值单调变化范围为10−8 ~ 0.22 cm2 V−1 s−1。在熔点范围内,液态和固态3MP的u值基本一致,而从液态过渡到固态3MP时,u的活化能在0.14 ~ 0.4 eV之间变化。固体3MP中电子迁移的活化能与电子从最深处的结构陷阱热释放的能量有关。在活化能为0.4 eV的情况下,用Arrhenius定律外推u(T)函数得到在77 K下u≈10−15 cm2 V−1 s−1,这与在77 K下3MP中捕获电子的准稳态光电导率测量和寿命评估结果一致。
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