Reliability and Uniformity Enhancement in 8T-SRAM based PUFs operating at NTC

Pramesh Pandey, Asmita Pal, Koushik Chakraborty, Sanghamitra Roy
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Abstract

SRAM-based PUFs (SPUFs) have emerged as promising security primitives for low-power devices. However, operating 8T-SPUFs at Near-Threshold Computing (NTC) realm is plagued by exacerbated process variation (PV) sensitivity which thwarts their reliable operation. In this paper, we demonstrate the massive degradation in the reliability and uniformity characteristics of 8T-SPUF. By exploiting the opportunities bestowed by schematic asymmetry of 8T-SPUF cells, we propose biasing and sizing based design strategies. Our techniques achieve an immense improvement of more than 55% in the percentage of unreliable cells and improves the proximity to ideal uniformity by 82%, over a baseline NTC 8T-SPUF with no enhancement.
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NTC下基于8T-SRAM的puf可靠性和均匀性增强
基于sram的puf (spuf)已成为低功耗设备的有前途的安全原语。然而,在近阈值计算(NTC)领域运行8t - spuf受到过程变化(PV)敏感性加剧的困扰,从而阻碍了它们的可靠运行。在本文中,我们证明了8T-SPUF的可靠性和均匀性的严重退化。通过利用8T-SPUF电池的原理图不对称所带来的机会,我们提出了基于偏置和尺寸的设计策略。与基线NTC 8T-SPUF相比,我们的技术实现了超过55%的不可靠电池百分比的巨大改进,并将接近理想均匀度的程度提高了82%,而没有增强。
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