UHF SiGe push-pull VCO MEMS oscillators

Y. Yoon, H. Moyer, D. Kirby, R. Kubena, R. Joyce, R. Bowen, H. Nguyen, D. Chang
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Abstract

UHF quartz MEMS oscillators operating at 813 MHz, 920 MHz and 1.048 GHz carrier frequencies utilizing a push-pull topology based on MOSIS SiGe 7WL technology have been demonstrated. The 1048 MHz resonator has an unloaded Q of 6,920 and a motional resistance of 31.7 ohms, as measured in a vacuum. This yields an fxQ product of 7.25×1012, close to the expected limit for quartz devices of 1×1013. Device phase noise was measured showing a minimum phase noise of -100 dBc/Hz for an 813 MHz oscillator at 1 kHz offset. A tuning range of 80 ppm was demonstrated at 920 MHz.
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超高频SiGe推挽式VCO MEMS振荡器
UHF石英MEMS振荡器工作在813 MHz, 920 MHz和1.048 GHz载波频率,利用基于MOSIS SiGe 7WL技术的推挽拓扑已经被证明。1048 MHz谐振器的卸载Q值为6,920,在真空中测量的运动电阻为31.7欧姆。由此得到的fxQ乘积为7.25×1012,接近石英器件的预期极限1×1013。器件相位噪声测量显示,在1 kHz偏移时,813 MHz振荡器的最小相位噪声为-100 dBc/Hz。在920 MHz时,调谐范围为80 ppm。
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