M. Lumb, M. Meitl, K. Schmieder, M. González, S. Mack, M. Yakes, M. Bennett, J. Frantz, M. Steiner, J. Geisz, D. Friedman, M. Slocum, S. Hubbard, Brent Fisher, S. Burroughs, R. Walters
{"title":"Towards the ultimate multi-junction solar cell using transfer printing","authors":"M. Lumb, M. Meitl, K. Schmieder, M. González, S. Mack, M. Yakes, M. Bennett, J. Frantz, M. Steiner, J. Geisz, D. Friedman, M. Slocum, S. Hubbard, Brent Fisher, S. Burroughs, R. Walters","doi":"10.1109/PVSC.2016.7749405","DOIUrl":null,"url":null,"abstract":"Transfer printing is a uniquely enabling technology for the heterogeneous integration of III-V materials grown on dissimilar substrates. In this paper, we present experimental results for a mechanically stacked tandem cell using GaAs and GaSb-based materials capable of harvesting the entire solar spectrum with 44.5% efficiency. We also present the latest results toward developing an ultra-high performance heterogeneous cell, integrating materials grown on GaAs, InP and GaSb platforms.","PeriodicalId":6524,"journal":{"name":"2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC)","volume":"110 1","pages":"0040-0045"},"PeriodicalIF":0.0000,"publicationDate":"2016-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"10","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PVSC.2016.7749405","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 10
Abstract
Transfer printing is a uniquely enabling technology for the heterogeneous integration of III-V materials grown on dissimilar substrates. In this paper, we present experimental results for a mechanically stacked tandem cell using GaAs and GaSb-based materials capable of harvesting the entire solar spectrum with 44.5% efficiency. We also present the latest results toward developing an ultra-high performance heterogeneous cell, integrating materials grown on GaAs, InP and GaSb platforms.
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