Effect of defect density in different layers and ambient temperature of n-i-p a-Si single junction solar cells performance

Abstract

: In this paper simulation study of optimized n-i-p a-si single junction solar cell which having defect density in different layers. From the simulation result, it was found that the conversion efficiency is affected due to the presence of defect density in different layers. The maximum conversion efficiency is found 24.74% and 22.94% at without defect density at 0ºC and 30ºC respectively, while the conversion efficiency become zero in p-type front layer in 10 22 cm -3 defect density and 11.35% in i-type absorber layer in 10 -21 cm -3 defect density. It is clear that the quality of absorber layer and front layer is the key factor in cell performance or efficiency improvement. These results are consistence with the fact that n-i-p a-Si single junction solar cell with the higher defect densities and dislocation exhibits a lower efficiency of the cell.