{"title":"Piecewise Analytical Transient Model of SiC MOSFET and SiC Schottky Diode Pair","authors":"Yikang Xiao, Zhengming Zhao, Bochen Shi, Zhujun Yu, Shengyu Jia, Shiqi Ji","doi":"10.1109/COMPEL52896.2023.10221131","DOIUrl":null,"url":null,"abstract":"This paper proposed a piecewise analytical transient (PAT) model of SiC MOSFET and SiC Schottky diode pair that can simulate the switching transient in a complex power electronics system with a large number of power switches. The proposed model eliminates the stiffness caused by the parasitic parameters and has a fast simulation speed. The nonlinearity of the junction capacitances is considered. Double pulse tests are conducted to verify the accuracy of the model.","PeriodicalId":55233,"journal":{"name":"Compel-The International Journal for Computation and Mathematics in Electrical and Electronic Engineering","volume":"1 1","pages":"1-6"},"PeriodicalIF":1.0000,"publicationDate":"2023-06-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Compel-The International Journal for Computation and Mathematics in Electrical and Electronic Engineering","FirstCategoryId":"5","ListUrlMain":"https://doi.org/10.1109/COMPEL52896.2023.10221131","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"COMPUTER SCIENCE, INTERDISCIPLINARY APPLICATIONS","Score":null,"Total":0}
引用次数: 0
Abstract
This paper proposed a piecewise analytical transient (PAT) model of SiC MOSFET and SiC Schottky diode pair that can simulate the switching transient in a complex power electronics system with a large number of power switches. The proposed model eliminates the stiffness caused by the parasitic parameters and has a fast simulation speed. The nonlinearity of the junction capacitances is considered. Double pulse tests are conducted to verify the accuracy of the model.
期刊介绍：
COMPEL exists for the discussion and dissemination of computational and analytical methods in electrical and electronic engineering. The main emphasis of papers should be on methods and new techniques, or the application of existing techniques in a novel way. Whilst papers with immediate application to particular engineering problems are welcome, so too are papers that form a basis for further development in the area of study. A double-blind review process ensures the content''s validity and relevance.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
