{"title":"O i and C s Impurities Study on the Edge of Si-mc Ingot for Photovoltaic Applications","authors":"F. Boufelgha, Y. Chettate, S. Belhousse","doi":"10.13189/UJPA.2016.100202","DOIUrl":null,"url":null,"abstract":"The objective of this work is determining the substitutional carbon ([Cs]) and interstitial oxygen ([Oi]) concentrations in the edge of the multicrystalline silicon ingot (mc-Si) for photovoltaic applications obtained by the heat exchanger method (HEM). Some calculations of [Cs] and [Oi] was obtain by the Fourier Transform InfraRed spectroscopy (FTIR). The results obtained for [Cs] give an increase of bottom-up of the ingot: 130 ppm to 150 ppm. The results obtained for the [Oi] give constant concentrations throughout the edge of the ingot with an author of concentration 325 ppm.","PeriodicalId":23443,"journal":{"name":"Universal Journal of Physics and Application","volume":"23 1","pages":"40-42"},"PeriodicalIF":0.0000,"publicationDate":"2016-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Universal Journal of Physics and Application","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.13189/UJPA.2016.100202","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The objective of this work is determining the substitutional carbon ([Cs]) and interstitial oxygen ([Oi]) concentrations in the edge of the multicrystalline silicon ingot (mc-Si) for photovoltaic applications obtained by the heat exchanger method (HEM). Some calculations of [Cs] and [Oi] was obtain by the Fourier Transform InfraRed spectroscopy (FTIR). The results obtained for [Cs] give an increase of bottom-up of the ingot: 130 ppm to 150 ppm. The results obtained for the [Oi] give constant concentrations throughout the edge of the ingot with an author of concentration 325 ppm.
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