{"title":"Polaron dissociation rate in armchair graphene nanoribbon","authors":"Asif Hassan, N. Hossain","doi":"10.1109/CEEE.2015.7428281","DOIUrl":null,"url":null,"abstract":"Graphene nanoribbons (GNRs) are considered as a prospective material for next generation nanoelectroic devices as well as optoelectronic devices. In previous literature, it is seen that, armchair GNRs (AGNRs) are always show semiconductor behavior due to considerable band gap. Along with this, excitation of photon to a doped GNRs create an electron hole charged pair. This kind of mechanism is an important phenomenon in solar cell, optoelectronics, and electronics devices and so on. In this paper, we will observe the polaron in A-GNR through a rate which is named as dissociation rate (creation of free charge carriers) depending upon some electronics properties like mobility, bandgap energy, carrier concentration, mobility. After that, we will observe the polaron dissociation rate for different width of AGNR.","PeriodicalId":6490,"journal":{"name":"2015 International Conference on Electrical & Electronic Engineering (ICEEE)","volume":"1 1","pages":"21-24"},"PeriodicalIF":0.0000,"publicationDate":"2015-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 International Conference on Electrical & Electronic Engineering (ICEEE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CEEE.2015.7428281","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Graphene nanoribbons (GNRs) are considered as a prospective material for next generation nanoelectroic devices as well as optoelectronic devices. In previous literature, it is seen that, armchair GNRs (AGNRs) are always show semiconductor behavior due to considerable band gap. Along with this, excitation of photon to a doped GNRs create an electron hole charged pair. This kind of mechanism is an important phenomenon in solar cell, optoelectronics, and electronics devices and so on. In this paper, we will observe the polaron in A-GNR through a rate which is named as dissociation rate (creation of free charge carriers) depending upon some electronics properties like mobility, bandgap energy, carrier concentration, mobility. After that, we will observe the polaron dissociation rate for different width of AGNR.